VISHAY SIHG73N60E-GE3 Power MOSFET, N Channel, 73 A, 650 V, 0.032 ohm, 10 V, 2 V SKB 1SKB19-R1208 1/4" Mono Unbalanced Handset 1/4"

1/4" Mono Unbalanced Handset 1/4" Phone Isolation Not specified by manufacturer Phone Line Connects to wireless Phone inputs via 1/4" jack Impedance Inputs

9 kg) Packaging Info Box Dimensions (LxWxH) 14

2-Leaf Design

providing password protection and software data encryption

8" (216 x 196 x 986 mm) Shipping Weight 18 lbs (8

VISHAY SIHG73N60E-GE3 Power MOSFET, N Channel, 73 A, 650 V, 0.032 ohm, 10 V, 2 V SKB 1SKB19-R1208 1/4" Mono Unbalanced Handset 1/4"The SIHG73N60E GE3 is a 650V N channel MOSFET with super junction technology to minimize on resistance and withstand high energy pulse. This E series MOSFET features low input capacitance, reduced switching and conduction losses and simple gate drive circuitry. It is designed for soft switching topologies. Suitable for server and telecom power supply applications. 100% Avalanche rated Low figure of merit Ron X Qg Ultra low gate charge Applications