Infineon FS75R12KE3GBOSA1 Igbt Array & Module Transistor N Channel 100 A 1.7 V 355 W 1.2 kV Archival Methods 01-037 Temperature Coefficient � 15ppm/�C Power

Temperature Coefficient � 15ppm/�C Power Rating 250mW Resistor Element Material Metal Film Automotive Qualification Standard - Resistance 432kohm Resistance Tolerance � 0

-12 to 5° tilt

6mm Width 25

0 receptacle housing

85 lb Box Dimensions (LxWxH) 4

Infineon FS75R12KE3GBOSA1 Igbt Array & Module Transistor N Channel 100 A 1.7 V 355 W 1.2 kV Archival Methods 01-037 Temperature Coefficient � 15ppm/�C PowerThis is a IGBT Array & Module Transistor, N Channel, 100 A, 1. 7 V, 355 W, 1. 2 kV, Module product from INFINEON with the model number FS75R12KE3GBOSA1Product details Transistor Polarity N Channel DC Collector Current 100A Collector Emitter Saturation Voltage Vce(on) 1. 7V Power Dissipation Pd 355W Collector Emitter Voltage V(br)ceo 1. 2kV Transistor Case Style Module No. of Pins Operating Temperature Max 125C Product Range EconoPACK 3 Series RoHS